unisonic technologies co., ltd utt70p10 preliminary power mosfet www.unisonic.com.tw 1 of 2 copyright ? 2012 unisonic technologies co., ltd qw-r502-725.a 70a, 100v p-channel power mosfet ? description the utc utt70p10 is a p-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed and a minimum on- state resistance. it can also withstand high energy in the avalanche. ? features * r ds(on) =0.03 ? @ v gs =-10v, i d =-20a * high switching speed ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 utt70p10l-ta3-t UTT70P10G-TA3-T to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt70p10 preliminary power mosfet unisonic technologies co., ltd 2 of 2 www.unisonic.com.tw qw-r502-725.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit gate-source voltage v gss 20 v drain current continuous i d -70 a pulsed i dm -90 a power dissipation p d 225 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to case jc 0.55 c/w ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v gs =0v -100 v drain-source leakage current i dss v ds =0.8max.rating,v gs =0v,t j =25c -1 a v ds =0.8max.rating,v gs =0v,t j =125c -500 gate- source leakage current forward i gss v gs =+20v +100 na reverse v gs =-20v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -1 -3 v static drain-source on-state resistance r ds ( on ) v gs =-10v, i d =-20a 0.03 ? dynamic parameters input capacitance c iss v gs =0v, v ds =-50v, f=1.0mhz 2250 pf output capacitance c oss 700 pf reverse transfer capacitance c rss 275 pf switching parameters turn-on delay time t d ( on ) v dd =-50v, v gs =-10v, i d =-50a,r g =1 ? 20 200 ns rise time t r 110 420 ns turn-off delay time t d ( off ) 145 1500 ns fall-time t f 300 500 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i f =-20a, v gs =0v, pulse test, t 300 s, duty cycle d 2% -1.0 -1.5 v body diode reverse recovery time t rr t j =25c, i f =-20a, v r =-50v, di/dt=-100a/s 80 120 ns utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
